High Vacuum PECVD Furnace with Molecular Pump and MFC

Plasma-enhanced chemical vapor deposition (PECVD) is a film growth technique that make gaseous substance containing thin films react by means of a glow discharge (plasma). According to experimental requirements,Our company designed this equipment which the equipment is designed to meet the needs of various types of film study.

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Product Introduction

Brief Introduction:

Technical Parameter

Tube Furnace	Display	LED
	Max. Temperature	1200℃ for limiting.
	Continuous Woking Temp.	≤1100℃
	Heating Rate	0~10℃/min
	Temperature Zone	Single
	Accuracy	±1℃
	Tube Size	50440mm(ODheating zone)
	Temperature Control	PID automatic control via SCR power control
	Heating curves	30 steps programmable
	Power	220V, 50 Hz,
Plasma RF Power supply	Output Power	5 -500W adjustable with ± 1% stability
	RF frequency	13.56 MHz ±0.005% stability
	Reflection Power	200W max.
	Matching	Automatic
	RF Output Port	50 Ω, N-type, female
	Noise	<50 dB.
	Cooling	Air cooling.
	Power	220V, 60Hz
Anti-corrosive Pressure Gauge	3.8x10^-5 to 1125 Torr measurement range Anti-corrosive, gas-type independent
Vacuum Pump	KFD25 adapter and stainless steel pipe are connected between pump tube flange with precision ball valve Digital vacuum pressure gauge and display are installed with the furnace Rotary pump + molecular pump
Mass Flow meters	Four precision mass flow meters : MFC 1: Gas flow range from 0~100 sccm MFC 2&3: Control range from 0~200 sccm MFC 4: Control range from 0~500 sccm One gas mixing tank is installed on bottom case with liquid release valve 4 stainless steel needle valves is installed on left side of bottom case to control 4type gases mixing manually Gas inlet fitting: four 1/4NPS Gas outlet fitting: four 1/4NPS